BC848BWT106 by ROHM Semicon – Specifications

ROHM Semicon BC848BWT106 is a BC848BWT106 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 200@2mA,5V 100mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 200MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

Full Specifications of BC848BWT106

Model NumberBC848BWT106
Model NameROHM Semicon BC848BWT106
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 200mW 200@2mA,5V 100mA NPN SOT-323-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseSOT-323-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)200@2mA,5V
Collector Current (Ic)100mA
Transition Frequency (fT)200MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@5mA,100mA

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