ROHM Semicon BC848CT116 is a BC848CT116 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 350mW 420@2mA,5V 100mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 15uA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 200MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on BC848CT116
Full Specifications of BC848CT116
| Model Number | BC848CT116 |
| Model Name | ROHM Semicon BC848CT116 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 30V 350mW 420@2mA,5V 100mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-236-3(SOT-23-3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 15uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 350mW |
| DC Current Gain (hFE@Ic,Vce) | 420@2mA,5V |
| Collector Current (Ic) | 100mA |
| Transition Frequency (fT) | 200MHz |
| Transistor Type | NPN |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@5mA,100mA |