BC857BU3HZGT106 by ROHM Semicon – Specifications

ROHM Semicon BC857BU3HZGT106 is a BC857BU3HZGT106 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 45V 200mW 210@2mA,5V 100mA PNP UMT-3 Bipolar Transistors - BJT ROHS. This product comes in a UMT-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 210@2mA,5V
  • Collector Current (Ic): 100mA
  • Transition Frequency (fT): 250MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

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Full Specifications of BC857BU3HZGT106

Model NumberBC857BU3HZGT106
Model NameROHM Semicon BC857BU3HZGT106
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description45V 200mW 210@2mA,5V 100mA PNP UMT-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseUMT-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)15nA
Collector-Emitter Breakdown Voltage (Vceo)45V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)210@2mA,5V
Collector Current (Ic)100mA
Transition Frequency (fT)250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)650mV@100mA,5mA
Transistor TypePNP
Operating Temperature-

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