ROHM Semicon BC858BHZGT116 is a BC858BHZGT116 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 200mW 210@2mA,5V 100mA TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 210@2mA,5V
- Collector Current (Ic): 100mA
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.018 grams.
More on BC858BHZGT116
Full Specifications of BC858BHZGT116
| Model Number | BC858BHZGT116 |
| Model Name | ROHM Semicon BC858BHZGT116 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 30V 200mW 210@2mA,5V 100mA TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.018 grams / 0.000635 oz |
| Package / Case | TO-236-3(SOT-23-3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 210@2mA,5V |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@100mA,5mA |
| Operating Temperature | - |