ROHM Semicon DTD114ECT116 is a DTD114ECT116 from ROHM Semicon, part of the Digital Transistors. It is designed for 56@50mA,5V 1 NPN - Pre Biased 200mW 500mA 50V TO-236-3(SOT-23-3) Digital Transistors ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- DC Current Gain (hFE@Ic,Vce): 56@50mA,5V
- Transistor Type: 1 NPN - Pre Biased
- Power Dissipation (Pd): 200mW
- Collector Current (Ic): 500mA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.063 grams.
More on DTD114ECT116
Full Specifications of DTD114ECT116
| Model Number | DTD114ECT116 |
| Model Name | ROHM Semicon DTD114ECT116 |
| Category | Digital Transistors |
| Brand | ROHM Semicon |
| Description | 56@50mA,5V 1 NPN - Pre Biased 200mW 500mA 50V TO-236-3(SOT-23-3) Digital Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.063 grams / 0.002222 oz |
| Package / Case | TO-236-3(SOT-23-3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| DC Current Gain (hFE@Ic,Vce) | 56@50mA,5V |
| Transistor Type | 1 NPN - Pre Biased |
| Power Dissipation (Pd) | 200mW |
| Collector Current (Ic) | 500mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |