ROHM Semicon EMB52T2R is a EMB52T2R from ROHM Semicon, part of the Digital Transistors. It is designed for 80@5mA,10V 2 PNP - Pre-Biased 150mW 100mA 50V SOT-563(SOT-666) Digital Transistors ROHS. This product comes in a SOT-563(SOT-666) package and is sold as Tape & Reel (TR). Key features include:
- DC Current Gain (hFE@Ic,Vce): 80@5mA,10V
- Transistor Type: 2 PNP - Pre-Biased
- Power Dissipation (Pd): 150mW
- Collector Current (Ic): 100mA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of EMB52T2R
| Model Number | EMB52T2R |
| Model Name | ROHM Semicon EMB52T2R |
| Category | Digital Transistors |
| Brand | ROHM Semicon |
| Description | 80@5mA,10V 2 PNP - Pre-Biased 150mW 100mA 50V SOT-563(SOT-666) Digital Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SOT-563(SOT-666) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| DC Current Gain (hFE@Ic,Vce) | 80@5mA,10V |
| Transistor Type | 2 PNP - Pre-Biased |
| Power Dissipation (Pd) | 150mW |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |