ROHM Semicon EMX1FHAT2R is a EMX1FHAT2R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 150mW 120@1mA,6V 150mA NPN SOT-563 Bipolar Transistors - BJT ROHS. This product comes in a SOT-563 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
- Collector Current (Ic): 150mA
- Transition Frequency (fT): 180MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@5mA,50mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.017 grams.
More on EMX1FHAT2R
Full Specifications of EMX1FHAT2R
| Model Number | EMX1FHAT2R |
| Model Name | ROHM Semicon EMX1FHAT2R |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 50V 150mW 120@1mA,6V 150mA NPN SOT-563 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.017 grams / 0.0006 oz |
| Package / Case | SOT-563 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Power Dissipation (Pd) | 150mW |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA,6V |
| Collector Current (Ic) | 150mA |
| Transition Frequency (fT) | 180MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@5mA,50mA |
| Transistor Type | NPN |