ROHM Semicon IMT4T108 is a IMT4T108 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 300mW 180@2mA,6V 50mA PNP SOT-457 Bipolar Transistors - BJT ROHS. This product comes in a SOT-457 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic,Vce): 180@2mA,6V
- Collector Current (Ic): 50mA
- Transition Frequency (fT): 140MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@1mA,10mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.036 grams.
More on IMT4T108
Full Specifications of IMT4T108
| Model Number | IMT4T108 |
| Model Name | ROHM Semicon IMT4T108 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 120V 300mW 180@2mA,6V 50mA PNP SOT-457 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.036 grams / 0.00127 oz |
| Package / Case | SOT-457 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain (hFE@Ic,Vce) | 180@2mA,6V |
| Collector Current (Ic) | 50mA |
| Transition Frequency (fT) | 140MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@1mA,10mA |
| Transistor Type | PNP |