IMX25T110 by ROHM Semicon – Specifications

ROHM Semicon IMX25T110 is a IMX25T110 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 300mW 820@4mA,2V 300mA NPN SC-74(SOT-457) Bipolar Transistors - BJT ROHS. This product comes in a SC-74(SOT-457) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 820@4mA,2V
  • Collector Current (Ic): 300mA
  • Transition Frequency (fT): 35MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@30mA,3mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IMX25T110

Model NumberIMX25T110
Model NameROHM Semicon IMX25T110
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description20V 300mW 820@4mA,2V 300mA NPN SC-74(SOT-457) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-74(SOT-457)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)20V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)820@4mA,2V
Collector Current (Ic)300mA
Transition Frequency (fT)35MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@30mA,3mA
Operating Temperature-

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