IMX8T108 by ROHM Semicon – Specifications

ROHM Semicon IMX8T108 is a IMX8T108 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 120V 300mW 180@2mA,6V 50mA NPN SOT-457 Bipolar Transistors - BJT ROHS. This product comes in a SOT-457 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 120V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 180@2mA,6V
  • Collector Current (Ic): 50mA
  • Transition Frequency (fT): 140MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,1mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.

Full Specifications of IMX8T108

Model NumberIMX8T108
Model NameROHM Semicon IMX8T108
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description120V 300mW 180@2mA,6V 50mA NPN SOT-457 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.034 grams / 0.001199 oz
Package / CaseSOT-457
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)500nA
Collector-Emitter Breakdown Voltage (Vceo)120V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)180@2mA,6V
Collector Current (Ic)50mA
Transition Frequency (fT)140MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@10mA,1mA
Transistor TypeNPN
Operating Temperature-

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