ROHM Semicon IMX9T110 is a IMX9T110 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 300mW 560@10mA,3V 500mA NPN SC-74 Bipolar Transistors - BJT ROHS. This product comes in a SC-74 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 20V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic,Vce): 560@10mA,3V
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 350MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 180mV@500mA,20mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.
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Full Specifications of IMX9T110
| Model Number | IMX9T110 |
| Model Name | ROHM Semicon IMX9T110 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 20V 300mW 560@10mA,3V 500mA NPN SC-74 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.031 grams / 0.001093 oz |
| Package / Case | SC-74 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain (hFE@Ic,Vce) | 560@10mA,3V |
| Collector Current (Ic) | 500mA |
| Transition Frequency (fT) | 350MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 180mV@500mA,20mA |
| Transistor Type | NPN |
| Operating Temperature | - |