ROHM Semicon IMZ1AT108 is a IMZ1AT108 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 300mW 120@1mA,6V 150mA NPN+PNP SOT-457 Bipolar Transistors - BJT ROHS. This product comes in a SOT-457 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
- Collector Current (Ic): 150mA
- Transition Frequency (fT): 180MHz;140MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@50mA,5mA;150mV@50mA,5mA
- Transistor Type: NPN+PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.032 grams.
More on IMZ1AT108
Full Specifications of IMZ1AT108
| Model Number | IMZ1AT108 |
| Model Name | ROHM Semicon IMZ1AT108 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 50V 300mW 120@1mA,6V 150mA NPN+PNP SOT-457 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.032 grams / 0.001129 oz |
| Package / Case | SOT-457 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA,6V |
| Collector Current (Ic) | 150mA |
| Transition Frequency (fT) | 180MHz;140MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 100mV@50mA,5mA;150mV@50mA,5mA |
| Transistor Type | NPN+PNP |
| Operating Temperature | - |