MMST3906T146 by ROHM Semicon – Specifications

ROHM Semicon MMST3906T146 is a MMST3906T146 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 40V 300mW 100@10mA,1V 200mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Power Dissipation (Pd): 300mW
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
  • Collector Current (Ic): 200mA
  • Transition Frequency (fT): 250MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@5mA,50mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of MMST3906T146

Model NumberMMST3906T146
Model NameROHM Semicon MMST3906T146
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description40V 300mW 100@10mA,1V 200mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-236-3(SOT-23-3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)50nA
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)100@10mA,1V
Collector Current (Ic)200mA
Transition Frequency (fT)250MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@5mA,50mA

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