ROHM Semicon MMST5086T146 is a MMST5086T146 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 200mW 150@100uA,5V 200mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 150@100uA,5V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 40MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@1mA,10mA
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of MMST5086T146
Model Number | MMST5086T146 |
Model Name | ROHM Semicon MMST5086T146 |
Category | Bipolar Transistors - BJT |
Brand | ROHM Semicon |
Description | 50V 200mW 150@100uA,5V 200mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-236-3(SOT-23-3) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Collector Cut-Off Current (Icbo) | 100nA |
Collector-Emitter Breakdown Voltage (Vceo) | 50V |
Power Dissipation (Pd) | 200mW |
DC Current Gain (hFE@Ic,Vce) | 150@100uA,5V |
Collector Current (Ic) | 200mA |
Transition Frequency (fT) | 40MHz |
Transistor Type | PNP |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@1mA,10mA |
Operating Temperature | -55℃~+150℃@(Tj) |