ROHM Semicon MMST8098T146 is a MMST8098T146 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 350mW 100@1mA,5V 200mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic,Vce): 100@1mA,5V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 350MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,100mA
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of MMST8098T146
| Model Number | MMST8098T146 |
| Model Name | ROHM Semicon MMST8098T146 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 60V 350mW 100@1mA,5V 200mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-236-3(SOT-23-3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Power Dissipation (Pd) | 350mW |
| DC Current Gain (hFE@Ic,Vce) | 100@1mA,5V |
| Collector Current (Ic) | 200mA |
| Transition Frequency (fT) | 350MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA,100mA |
| Transistor Type | NPN |