ROHM Semicon QS5Y2FSTR is a QS5Y2FSTR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 500mW 180@50mA,3V 3A NPN+PNP TSMT-5 Bipolar Transistors - BJT ROHS. This product comes in a TSMT-5 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic,Vce): 180@50mA,3V
- Collector Current (Ic): 3A
- Transition Frequency (fT): 320MHz;300MHz
- Transistor Type: NPN+PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 350mV@1A,50mA;400mV@1A,50mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of QS5Y2FSTR
| Model Number | QS5Y2FSTR |
| Model Name | ROHM Semicon QS5Y2FSTR |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 50V 500mW 180@50mA,3V 3A NPN+PNP TSMT-5 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TSMT-5 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Power Dissipation (Pd) | 500mW |
| DC Current Gain (hFE@Ic,Vce) | 180@50mA,3V |
| Collector Current (Ic) | 3A |
| Transition Frequency (fT) | 320MHz;300MHz |
| Transistor Type | NPN+PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 350mV@1A,50mA;400mV@1A,50mA |
| Operating Temperature | - |