QSZ4TR by ROHM Semicon – Specifications

ROHM Semicon QSZ4TR is a QSZ4TR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 500mW 270@200mA,2V 2A NPN+PNP TSMT5 Bipolar Transistors - BJT ROHS. This product comes in a TSMT5 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 500mW
  • DC Current Gain (hFE@Ic,Vce): 270@200mA,2V
  • Collector Current (Ic): 2A
  • Transition Frequency (fT): 280MHz
  • Transistor Type: NPN+PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 370mV@75mA,1.5A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.

Full Specifications of QSZ4TR

Model NumberQSZ4TR
Model NameROHM Semicon QSZ4TR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 500mW 270@200mA,2V 2A NPN+PNP TSMT5 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.034 grams / 0.001199 oz
Package / CaseTSMT5
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)500mW
DC Current Gain (hFE@Ic,Vce)270@200mA,2V
Collector Current (Ic)2A
Transition Frequency (fT)280MHz
Transistor TypeNPN+PNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)370mV@75mA,1.5A

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