SSTA06T116 by ROHM Semicon – Specifications

ROHM Semicon SSTA06T116 is a SSTA06T116 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 350mW 100@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE@Ic,Vce): 100@100mA,1V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 100MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@100mA,10mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.47 grams.

Full Specifications of SSTA06T116

Model NumberSSTA06T116
Model NameROHM Semicon SSTA06T116
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description80V 350mW 100@100mA,1V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.470 grams / 0.016579 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)350mW
DC Current Gain (hFE@Ic,Vce)100@100mA,1V
Collector Current (Ic)500mA
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypeNPN
Operating Temperature-

Compare ROHM Semicon - SSTA06T116 With Other 59 Models

Related Models - SSTA06T116 Alternative

Scroll to Top