ROHM Semicon SSTA56T116 is a SSTA56T116 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 80V 350mW 100@100mA,1V 500mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS. This product comes in a TO-236-3(SOT-23-3) package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic,Vce): 100@100mA,1V
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 50MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,100mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SSTA56T116
Full Specifications of SSTA56T116
| Model Number | SSTA56T116 |
| Model Name | ROHM Semicon SSTA56T116 |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 80V 350mW 100@100mA,1V 500mA PNP TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TO-236-3(SOT-23-3) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Power Dissipation (Pd) | 350mW |
| DC Current Gain (hFE@Ic,Vce) | 100@100mA,1V |
| Collector Current (Ic) | 500mA |
| Transition Frequency (fT) | 50MHz |
| Transistor Type | PNP |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@10mA,100mA |