UMT2907AT106 by ROHM Semicon – Specifications

ROHM Semicon UMT2907AT106 is a UMT2907AT106 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 60V 200mW 100@150mA,10V 600mA PNP SOT-323-3 Bipolar Transistors - BJT ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 200MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@500mA,50mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.028 grams.

More on UMT2907AT106

Full Specifications of UMT2907AT106

Model NumberUMT2907AT106
Model NameROHM Semicon UMT2907AT106
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description60V 200mW 100@150mA,10V 600mA PNP SOT-323-3 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.028 grams / 0.000988 oz
Package / CaseSOT-323-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)60V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)100@150mA,10V
Collector Current (Ic)600mA
Transition Frequency (fT)200MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.6V@500mA,50mA
Transistor TypePNP
Operating Temperature-

Compare ROHM Semicon - UMT2907AT106 With Other 200 Models

Related Models - UMT2907AT106 Alternative

Scroll to Top