UMT4401U3T106 by ROHM Semicon – Specifications

ROHM Semicon UMT4401U3T106 is a UMT4401U3T106 from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 40V 200mW 100@150mA,1V 600mA NPN SC-70(SOT-323) Bipolar Transistors - BJT ROHS. This product comes in a SC-70(SOT-323) package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Power Dissipation (Pd): 200mW
  • DC Current Gain (hFE@Ic,Vce): 100@150mA,1V
  • Collector Current (Ic): 600mA
  • Transition Frequency (fT): 250MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 750mV@50mA,500mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of UMT4401U3T106

Model NumberUMT4401U3T106
Model NameROHM Semicon UMT4401U3T106
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description40V 200mW 100@150mA,1V 600mA NPN SC-70(SOT-323) Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSC-70(SOT-323)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)200mW
DC Current Gain (hFE@Ic,Vce)100@150mA,1V
Collector Current (Ic)600mA
Transition Frequency (fT)250MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@50mA,500mA

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