UMX18NTN by ROHM Semicon – Specifications

ROHM Semicon UMX18NTN is a UMX18NTN from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 12V 150mW 270@10mA,2V 500mA NPN SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 12V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 270@10mA,2V
  • Collector Current (Ic): 500mA
  • Transition Frequency (fT): 320MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,200mA
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

More on UMX18NTN

Full Specifications of UMX18NTN

Model NumberUMX18NTN
Model NameROHM Semicon UMX18NTN
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description12V 150mW 270@10mA,2V 500mA NPN SOT-363 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseSOT-363
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)12V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)270@10mA,2V
Collector Current (Ic)500mA
Transition Frequency (fT)320MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@10mA,200mA
Transistor TypeNPN

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