UMX1NFHATN by ROHM Semicon – Specifications

ROHM Semicon UMX1NFHATN is a UMX1NFHATN from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 150mW 120@1mA,6V 150mA NPN UMT-6 Bipolar Transistors - BJT ROHS. This product comes in a UMT-6 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
  • Collector Current (Ic): 150mA
  • Transition Frequency (fT): 180MHz
  • Transistor Type: NPN
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.017 grams.

Full Specifications of UMX1NFHATN

Model NumberUMX1NFHATN
Model NameROHM Semicon UMX1NFHATN
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description50V 150mW 120@1mA,6V 150mA NPN UMT-6 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.017 grams / 0.0006 oz
Package / CaseUMT-6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)120@1mA,6V
Collector Current (Ic)150mA
Transition Frequency (fT)180MHz
Transistor TypeNPN
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@50mA,5mA
Operating Temperature-

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