UMY1NTR by ROHM Semicon – Specifications

ROHM Semicon UMY1NTR is a UMY1NTR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 50V 150mW 120@1mA,6V 150mA NPN+PNP SOT-353-5 Bipolar Transistors - BJT ROHS. This product comes in a SOT-353-5 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Power Dissipation (Pd): 150mW
  • DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
  • Collector Current (Ic): 150mA
  • Transition Frequency (fT): 180MHz;140MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA;500mV@50mA,5mA
  • Transistor Type: NPN+PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.025 grams.

More on UMY1NTR

Full Specifications of UMY1NTR

Model NumberUMY1NTR
Model NameROHM Semicon UMY1NTR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description50V 150mW 120@1mA,6V 150mA NPN+PNP SOT-353-5 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.025 grams / 0.000882 oz
Package / CaseSOT-353-5
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)150mW
DC Current Gain (hFE@Ic,Vce)120@1mA,6V
Collector Current (Ic)150mA
Transition Frequency (fT)180MHz;140MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@50mA,5mA;500mV@50mA,5mA
Transistor TypeNPN+PNP
Operating Temperature-

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