US6T5TR by ROHM Semicon – Specifications

ROHM Semicon US6T5TR is a US6T5TR from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 30V 400mW 270@200mA,2V 2A PNP TUMT6 Bipolar Transistors - BJT ROHS. This product comes in a TUMT6 package and is sold as Tape & Reel (TR). Key features include:

  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Power Dissipation (Pd): 400mW
  • DC Current Gain (hFE@Ic,Vce): 270@200mA,2V
  • Collector Current (Ic): 2A
  • Transition Frequency (fT): 280MHz
  • Transistor Type: PNP
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 370mV@75mA,1.5A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of US6T5TR

Model NumberUS6T5TR
Model NameROHM Semicon US6T5TR
CategoryBipolar Transistors - BJT
BrandROHM Semicon
Description30V 400mW 270@200mA,2V 2A PNP TUMT6 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTUMT6
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)400mW
DC Current Gain (hFE@Ic,Vce)270@200mA,2V
Collector Current (Ic)2A
Transition Frequency (fT)280MHz
Transistor TypePNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)370mV@75mA,1.5A

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