ROHM Semicon VT6T1T2R is a VT6T1T2R from ROHM Semicon, part of the Bipolar Transistors - BJT. It is designed for 20V 150mW 120@1mA,6V 200mA PNP SMD-6P Bipolar Transistors - BJT ROHS. This product comes in a SMD-6P package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 20V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic,Vce): 120@1mA,6V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 350MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,100mA
- Transistor Type: PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.031 grams.
More on VT6T1T2R
Full Specifications of VT6T1T2R
| Model Number | VT6T1T2R |
| Model Name | ROHM Semicon VT6T1T2R |
| Category | Bipolar Transistors - BJT |
| Brand | ROHM Semicon |
| Description | 20V 150mW 120@1mA,6V 200mA PNP SMD-6P Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.031 grams / 0.001093 oz |
| Package / Case | SMD-6P |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 20V |
| Power Dissipation (Pd) | 150mW |
| DC Current Gain (hFE@Ic,Vce) | 120@1mA,6V |
| Collector Current (Ic) | 200mA |
| Transition Frequency (fT) | 350MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@10mA,100mA |
| Transistor Type | PNP |