PNMT8N1 by Shanghai Prisemi Elec – Specifications

Shanghai Prisemi Elec PNMT8N1 is a PNMT8N1 from Shanghai Prisemi Elec, part of the MOSFETs. It is designed for 20V 300mA 150mW 500mΩ@4V,300mA 1.1V@1mA 1PCSNChannel DFN-10-EP(2x3) MOSFETs ROHS. This product comes in a DFN-10-EP(2x3) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 300mA
  • Power Dissipation (Pd): 150mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 500mΩ@4V,300mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@1mA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.034 grams.

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Full Specifications of PNMT8N1

Model NumberPNMT8N1
Model NameShanghai Prisemi Elec PNMT8N1
CategoryMOSFETs
BrandShanghai Prisemi Elec
Description20V 300mA 150mW 500mΩ@4V,300mA 1.1V@1mA 1PCSNChannel DFN-10-EP(2x3) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.034 grams / 0.001199 oz
Package / CaseDFN-10-EP(2x3)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)300mA
Power Dissipation (Pd)150mW
Drain Source On Resistance (RDS(on)@Vgs,Id)500mΩ@4V,300mA
Gate Threshold Voltage (Vgs(th)@Id)1.1V@1mA
Type1PCSNChannel

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