Sine Microelectronics ASM6115 is a ASM6115 from Sine Microelectronics, part of the MOSFETs. It is designed for 60V 35A 25mΩ@10V,18A 52.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,18A
- Power Dissipation (Pd): 52.1W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 141pF@15V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 3.635nF@15V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.
More on ASM6115
Full Specifications of ASM6115
Model Number | ASM6115 |
Model Name | Sine Microelectronics ASM6115 |
Category | MOSFETs |
Brand | Sine Microelectronics |
Description | 60V 35A 25mΩ@10V,18A 52.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.400 grams / 0.01411 oz |
Package / Case | TO-252-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 35A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,18A |
Power Dissipation (Pd) | 52.1W |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) | 141pF@15V |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 3.635nF@15V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+150℃@(Tj) |