NJW1302G by SPTECH – Specifications

SPTECH NJW1302G is a NJW1302G from SPTECH, part of the Bipolar Transistors - BJT. It is designed for 250V 200W 75@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS. This product comes in a TO-3PN package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 50mA
  • Collector-Emitter Breakdown Voltage (Vceo): 250V
  • Power Dissipation (Pd): 200W
  • DC Current Gain (hFE@Ic,Vce): 75@3A,5V
  • Collector Current (Ic): 15A
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@8A,800mA
  • Transistor Type: PNP

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.36 grams.

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Full Specifications of NJW1302G

Model NumberNJW1302G
Model NameSPTECH NJW1302G
CategoryBipolar Transistors - BJT
BrandSPTECH
Description250V 200W 75@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.360 grams / 0.224343 oz
Package / CaseTO-3PN
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)50mA
Collector-Emitter Breakdown Voltage (Vceo)250V
Power Dissipation (Pd)200W
DC Current Gain (hFE@Ic,Vce)75@3A,5V
Collector Current (Ic)15A
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@8A,800mA
Transistor TypePNP
Operating Temperature-

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