STGB10M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGB10M65DF2 is a STGB10M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 115W 20A 650V FS(Field Stop) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Power Dissipation (Pd): 115W
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 20A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Diode Reverse Recovery Time (Trr): 96ns
  • Turn?off Switching Loss (Eoff): 0.27mJ
  • Turn?on Switching Loss (Eon): 0.12mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.068 grams.

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Full Specifications of STGB10M65DF2

Model NumberSTGB10M65DF2
Model NameSTMicroelectronics STGB10M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description115W 20A 650V FS(Field Stop) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.068 grams / 0.072947 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Power Dissipation (Pd)115W
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)20A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Diode Reverse Recovery Time (Trr)96ns
Turn?off Switching Loss (Eoff)0.27mJ
Turn?on Switching Loss (Eon)0.12mJ

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