STMicroelectronics STGB14NC60KDT4 is a STGB14NC60KDT4 from STMicroelectronics, part of the IGBTs. It is designed for 80W 25A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Turn?off Delay Time (Td(off)): 116ns
- Power Dissipation (Pd): 80W
- Turn?on Delay Time (Td(on)): 22.5ns
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 25A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,7A
- Total Gate Charge (Qg@Ic,Vge): 34.4nC
- Diode Reverse Recovery Time (Trr): 37ns
- Turn?off Switching Loss (Eoff): 0.155mJ
- Turn?on Switching Loss (Eon): 0.082mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.871 grams.
More on STGB14NC60KDT4
Full Specifications of STGB14NC60KDT4
Model Number | STGB14NC60KDT4 |
Model Name | STMicroelectronics STGB14NC60KDT4 |
Category | IGBTs |
Brand | STMicroelectronics |
Description | 80W 25A 600V D2PAK IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.871 grams / 0.065998 oz |
Package / Case | D2PAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Turn?off Delay Time (Td(off)) | 116ns |
Power Dissipation (Pd) | 80W |
Turn?on Delay Time (Td(on)) | 22.5ns |
Operating Temperature | -55℃~+150℃@(Tj) |
Collector Current (Ic) | 25A |
Collector-Emitter Breakdown Voltage (Vces) | 600V |
Input Capacitance (Cies@Vce) | - |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,7A |
Total Gate Charge (Qg@Ic,Vge) | 34.4nC |
Diode Reverse Recovery Time (Trr) | 37ns |
Turn?off Switching Loss (Eoff) | 0.155mJ |
Turn?on Switching Loss (Eon) | 0.082mJ |
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