STGB19NC60HDT4 by STMicroelectronics – Specifications

STMicroelectronics STGB19NC60HDT4 is a STGB19NC60HDT4 from STMicroelectronics, part of the IGBTs. It is designed for 130W 40A 600V TO-263-2 IGBTs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 97ns
  • Power Dissipation (Pd): 130W
  • Turn?on Delay Time (Td(on)): 25ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,12A
  • Total Gate Charge (Qg@Ic,Vge): 53nC
  • Diode Reverse Recovery Time (Trr): 31ns
  • Turn?off Switching Loss (Eoff): 0.189mJ
  • Turn?on Switching Loss (Eon): 0.085mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.915 grams.

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Full Specifications of STGB19NC60HDT4

Model NumberSTGB19NC60HDT4
Model NameSTMicroelectronics STGB19NC60HDT4
CategoryIGBTs
BrandSTMicroelectronics
Description130W 40A 600V TO-263-2 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.915 grams / 0.06755 oz
Package / CaseTO-263-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))97ns
Power Dissipation (Pd)130W
Turn?on Delay Time (Td(on))25ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,12A
Total Gate Charge (Qg@Ic,Vge)53nC
Diode Reverse Recovery Time (Trr)31ns
Turn?off Switching Loss (Eoff)0.189mJ
Turn?on Switching Loss (Eon)0.085mJ

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