STGB20H65DFB2 by STMicroelectronics – Specifications

STMicroelectronics STGB20H65DFB2 is a STGB20H65DFB2 from STMicroelectronics, part of the IGBTs. It is designed for 147W 40A 650V FS(Field Stop) D2PAK-3 IGBTs ROHS. This product comes in a D2PAK-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 78.8ns
  • Power Dissipation (Pd): 147W
  • Turn?on Delay Time (Td(on)): 16ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 56nC
  • Diode Reverse Recovery Time (Trr): 215ns
  • Turn?off Switching Loss (Eoff): 0.214mJ
  • Turn?on Switching Loss (Eon): 0.265mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.2 grams.

More on STGB20H65DFB2

Full Specifications of STGB20H65DFB2

Model NumberSTGB20H65DFB2
Model NameSTMicroelectronics STGB20H65DFB2
CategoryIGBTs
BrandSTMicroelectronics
Description147W 40A 650V FS(Field Stop) D2PAK-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.200 grams / 0.253973 oz
Package / CaseD2PAK-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))78.8ns
Power Dissipation (Pd)147W
Turn?on Delay Time (Td(on))16ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,20A
Total Gate Charge (Qg@Ic,Vge)56nC
Diode Reverse Recovery Time (Trr)215ns
Turn?off Switching Loss (Eoff)0.214mJ
Turn?on Switching Loss (Eon)0.265mJ

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