STGB20M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGB20M65DF2 is a STGB20M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 166W 40A 650V FS(Field Stop) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 108ns
  • Power Dissipation (Pd): 166W
  • Turn?on Delay Time (Td(on)): 26ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 63nC
  • Diode Reverse Recovery Time (Trr): 166ns
  • Turn?off Switching Loss (Eoff): 0.56mJ
  • Turn?on Switching Loss (Eon): 0.14mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.607 grams.

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Full Specifications of STGB20M65DF2

Model NumberSTGB20M65DF2
Model NameSTMicroelectronics STGB20M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description166W 40A 650V FS(Field Stop) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.607 grams / 0.056685 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))108ns
Power Dissipation (Pd)166W
Turn?on Delay Time (Td(on))26ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,20A
Total Gate Charge (Qg@Ic,Vge)63nC
Diode Reverse Recovery Time (Trr)166ns
Turn?off Switching Loss (Eoff)0.56mJ
Turn?on Switching Loss (Eon)0.14mJ

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