STGB30H60DFB by STMicroelectronics – Specifications

STMicroelectronics STGB30H60DFB is a STGB30H60DFB from STMicroelectronics, part of the IGBTs. It is designed for 260W 60A 600V FS(Field Stop) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 146ns
  • Power Dissipation (Pd): 260W
  • Turn?on Delay Time (Td(on)): 37ns
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 149nC
  • Diode Reverse Recovery Time (Trr): 53ns
  • Turn?off Switching Loss (Eoff): 0.293mJ
  • Turn?on Switching Loss (Eon): 0.383mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.84 grams.

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Full Specifications of STGB30H60DFB

Model NumberSTGB30H60DFB
Model NameSTMicroelectronics STGB30H60DFB
CategoryIGBTs
BrandSTMicroelectronics
Description260W 60A 600V FS(Field Stop) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.840 grams / 0.064904 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))146ns
Power Dissipation (Pd)260W
Turn?on Delay Time (Td(on))37ns
Operating Temperature-
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,30A
Total Gate Charge (Qg@Ic,Vge)149nC
Diode Reverse Recovery Time (Trr)53ns
Turn?off Switching Loss (Eoff)0.293mJ
Turn?on Switching Loss (Eon)0.383mJ

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