STGB30H65DFB2 by STMicroelectronics – Specifications

STMicroelectronics STGB30H65DFB2 is a STGB30H65DFB2 from STMicroelectronics, part of the IGBTs. It is designed for 167W 50A 650V FS(Field Stop) D2PAK-3 IGBTs ROHS. This product comes in a D2PAK-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 71ns
  • Power Dissipation (Pd): 167W
  • Turn?on Delay Time (Td(on)): 18.4ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 50A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 90nC
  • Diode Reverse Recovery Time (Trr): 115ns
  • Turn?off Switching Loss (Eoff): 0.31mJ
  • Turn?on Switching Loss (Eon): 0.27mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on STGB30H65DFB2

Full Specifications of STGB30H65DFB2

Model NumberSTGB30H65DFB2
Model NameSTMicroelectronics STGB30H65DFB2
CategoryIGBTs
BrandSTMicroelectronics
Description167W 50A 650V FS(Field Stop) D2PAK-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))71ns
Power Dissipation (Pd)167W
Turn?on Delay Time (Td(on))18.4ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)50A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,30A
Total Gate Charge (Qg@Ic,Vge)90nC
Diode Reverse Recovery Time (Trr)115ns
Turn?off Switching Loss (Eoff)0.31mJ
Turn?on Switching Loss (Eon)0.27mJ

Compare STMicroelectronics - STGB30H65DFB2 With Other 200 Models

Related Models - STGB30H65DFB2 Alternative

Scroll to Top