STGB30M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGB30M65DF2 is a STGB30M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 258W 60A 650V FS(Field Stop) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Power Dissipation (Pd): 258W
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Diode Reverse Recovery Time (Trr): 140ns
  • Turn?off Switching Loss (Eoff): 0.96mJ
  • Turn?on Switching Loss (Eon): 0.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.623 grams.

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Full Specifications of STGB30M65DF2

Model NumberSTGB30M65DF2
Model NameSTMicroelectronics STGB30M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description258W 60A 650V FS(Field Stop) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.623 grams / 0.05725 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Power Dissipation (Pd)258W
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Diode Reverse Recovery Time (Trr)140ns
Turn?off Switching Loss (Eoff)0.96mJ
Turn?on Switching Loss (Eon)0.3mJ

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