STMicroelectronics STGD18N40LZT4 is a STGD18N40LZT4 from STMicroelectronics, part of the IGBTs. It is designed for 125W 25A 420V DPAK IGBTs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:
- Turn?off Delay Time (Td(off)): 13.5us
- Power Dissipation (Pd): 125W
- Turn?on Delay Time (Td(on)): 650ns
- Operating Temperature: -55℃~+175℃@(Tj)
- Collector Current (Ic): 25A
- Collector-Emitter Breakdown Voltage (Vces): 420V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): [email protected],10A
- Total Gate Charge (Qg@Ic,Vge): 29nC
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.
More on STGD18N40LZT4
Full Specifications of STGD18N40LZT4
Model Number | STGD18N40LZT4 |
Model Name | STMicroelectronics STGD18N40LZT4 |
Category | IGBTs |
Brand | STMicroelectronics |
Description | 125W 25A 420V DPAK IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.490 grams / 0.017284 oz |
Package / Case | DPAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Turn?off Delay Time (Td(off)) | 13.5us |
Power Dissipation (Pd) | 125W |
Turn?on Delay Time (Td(on)) | 650ns |
Operating Temperature | -55℃~+175℃@(Tj) |
Collector Current (Ic) | 25A |
Collector-Emitter Breakdown Voltage (Vces) | 420V |
Input Capacitance (Cies@Vce) | - |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected],10A |
Total Gate Charge (Qg@Ic,Vge) | 29nC |
Turn?on Switching Loss (Eon) | - |
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