STGD8NC60KDT4 by STMicroelectronics – Specifications

STMicroelectronics STGD8NC60KDT4 is a STGD8NC60KDT4 from STMicroelectronics, part of the IGBTs. It is designed for 62W 15A 600V TO-252-2(DPAK) IGBTs ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 72ns
  • Power Dissipation (Pd): 62W
  • Turn?on Delay Time (Td(on)): 17ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 15A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.75V@15V,3A
  • Total Gate Charge (Qg@Ic,Vge): 19nC
  • Diode Reverse Recovery Time (Trr): 23.5ns
  • Turn?off Switching Loss (Eoff): 0.085mJ
  • Turn?on Switching Loss (Eon): 0.055mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.475 grams.

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Full Specifications of STGD8NC60KDT4

Model NumberSTGD8NC60KDT4
Model NameSTMicroelectronics STGD8NC60KDT4
CategoryIGBTs
BrandSTMicroelectronics
Description62W 15A 600V TO-252-2(DPAK) IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.475 grams / 0.016755 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))72ns
Power Dissipation (Pd)62W
Turn?on Delay Time (Td(on))17ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)15A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,3A
Total Gate Charge (Qg@Ic,Vge)19nC
Diode Reverse Recovery Time (Trr)23.5ns
Turn?off Switching Loss (Eoff)0.085mJ
Turn?on Switching Loss (Eon)0.055mJ

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