STGF10NC60KD by STMicroelectronics – Specifications

STMicroelectronics STGF10NC60KD is a STGF10NC60KD from STMicroelectronics, part of the IGBTs. It is designed for 25W 9A 600V TO-220FP-3 IGBTs ROHS. This product comes in a TO-220FP-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 72ns
  • Power Dissipation (Pd): 25W
  • Turn?on Delay Time (Td(on)): 17ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 9A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,5A
  • Total Gate Charge (Qg@Ic,Vge): 19nC
  • Diode Reverse Recovery Time (Trr): 22ns
  • Turn?off Switching Loss (Eoff): 0.085mJ
  • Turn?on Switching Loss (Eon): 0.055mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.06 grams.

Full Specifications of STGF10NC60KD

Model NumberSTGF10NC60KD
Model NameSTMicroelectronics STGF10NC60KD
CategoryIGBTs
BrandSTMicroelectronics
Description25W 9A 600V TO-220FP-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.060 grams / 0.107938 oz
Package / CaseTO-220FP-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))72ns
Power Dissipation (Pd)25W
Turn?on Delay Time (Td(on))17ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)9A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,5A
Total Gate Charge (Qg@Ic,Vge)19nC
Diode Reverse Recovery Time (Trr)22ns
Turn?off Switching Loss (Eoff)0.085mJ
Turn?on Switching Loss (Eon)0.055mJ

Compare STMicroelectronics - STGF10NC60KD With Other 81 Models

Related Models - STGF10NC60KD Alternative

Scroll to Top