STGF15H60DF by STMicroelectronics – Specifications

STMicroelectronics STGF15H60DF is a STGF15H60DF from STMicroelectronics, part of the IGBTs. It is designed for 30W 30A 600V FS(Field Stop) TO-220FP IGBTs ROHS. This product comes in a TO-220FP package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 30W
  • Turn?off Delay Time (Td(off)): 118ns
  • Turn?on Delay Time (Td(on)): 24.5ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 30A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,15A
  • Total Gate Charge (Qg@Ic,Vge): 81nC
  • Diode Reverse Recovery Time (Trr): 103ns

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.42 grams.

Full Specifications of STGF15H60DF

Model NumberSTGF15H60DF
Model NameSTMicroelectronics STGF15H60DF
CategoryIGBTs
BrandSTMicroelectronics
Description30W 30A 600V FS(Field Stop) TO-220FP IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.420 grams / 0.085363 oz
Package / CaseTO-220FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)30W
Turn?off Delay Time (Td(off))118ns
Turn?on Delay Time (Td(on))24.5ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)30A
Collector-Emitter Breakdown Voltage (Vces)600V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,15A
Total Gate Charge (Qg@Ic,Vge)81nC
Diode Reverse Recovery Time (Trr)103ns

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