STGF30M65DF2 by STMicroelectronics – Specifications

STMicroelectronics STGF30M65DF2 is a STGF30M65DF2 from STMicroelectronics, part of the IGBTs. It is designed for 38W 60A 650V FS(Field Stop) TO-220FP-3 IGBTs ROHS. This product comes in a TO-220FP-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 115ns
  • Power Dissipation (Pd): 38W
  • Turn?on Delay Time (Td(on)): 31.6ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 80nC
  • Diode Reverse Recovery Time (Trr): 140ns
  • Turn?off Switching Loss (Eoff): 0.96mJ
  • Turn?on Switching Loss (Eon): 0.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.5 grams.

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Full Specifications of STGF30M65DF2

Model NumberSTGF30M65DF2
Model NameSTMicroelectronics STGF30M65DF2
CategoryIGBTs
BrandSTMicroelectronics
Description38W 60A 650V FS(Field Stop) TO-220FP-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.500 grams / 0.123459 oz
Package / CaseTO-220FP-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))115ns
Power Dissipation (Pd)38W
Turn?on Delay Time (Td(on))31.6ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,30A
Total Gate Charge (Qg@Ic,Vge)80nC
Diode Reverse Recovery Time (Trr)140ns
Turn?off Switching Loss (Eoff)0.96mJ
Turn?on Switching Loss (Eon)0.3mJ

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