STGP19NC60KD by STMicroelectronics – Specifications

STMicroelectronics STGP19NC60KD is a STGP19NC60KD from STMicroelectronics, part of the IGBTs. It is designed for 125W 35A 600V TO-220 IGBTs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 105ns
  • Power Dissipation (Pd): 125W
  • Turn?on Delay Time (Td(on)): 30ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 35A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.75V@15V,12A
  • Total Gate Charge (Qg@Ic,Vge): 55nC
  • Diode Reverse Recovery Time (Trr): 31ns
  • Turn?off Switching Loss (Eoff): 0.255mJ
  • Turn?on Switching Loss (Eon): 0.165mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.72 grams.

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Full Specifications of STGP19NC60KD

Model NumberSTGP19NC60KD
Model NameSTMicroelectronics STGP19NC60KD
CategoryIGBTs
BrandSTMicroelectronics
Description125W 35A 600V TO-220 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.720 grams / 0.095945 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))105ns
Power Dissipation (Pd)125W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)35A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,12A
Total Gate Charge (Qg@Ic,Vge)55nC
Diode Reverse Recovery Time (Trr)31ns
Turn?off Switching Loss (Eoff)0.255mJ
Turn?on Switching Loss (Eon)0.165mJ

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