STGW30V60DF by STMicroelectronics – Specifications

STMicroelectronics STGW30V60DF is a STGW30V60DF from STMicroelectronics, part of the IGBTs. It is designed for 258W 60A 600V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 189ns
  • Power Dissipation (Pd): 258W
  • Turn?on Delay Time (Td(on)): 45ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.3V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 163nC
  • Diode Reverse Recovery Time (Trr): 53ns
  • Turn?off Switching Loss (Eoff): 0.233mJ
  • Turn?on Switching Loss (Eon): 0.383mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7 grams.

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Full Specifications of STGW30V60DF

Model NumberSTGW30V60DF
Model NameSTMicroelectronics STGW30V60DF
CategoryIGBTs
BrandSTMicroelectronics
Description258W 60A 600V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.000 grams / 0.246918 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))189ns
Power Dissipation (Pd)258W
Turn?on Delay Time (Td(on))45ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.3V@15V,30A
Total Gate Charge (Qg@Ic,Vge)163nC
Diode Reverse Recovery Time (Trr)53ns
Turn?off Switching Loss (Eoff)0.233mJ
Turn?on Switching Loss (Eon)0.383mJ

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