STGW39NC60VD by STMicroelectronics – Specifications

STMicroelectronics STGW39NC60VD is a STGW39NC60VD from STMicroelectronics, part of the IGBTs. It is designed for 250W 80A 600V TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 178ns
  • Power Dissipation (Pd): 250W
  • Turn?on Delay Time (Td(on)): 33ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 126nC
  • Diode Reverse Recovery Time (Trr): 45ns
  • Turn?off Switching Loss (Eoff): 0.537mJ
  • Turn?on Switching Loss (Eon): 0.333mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.985 grams.

More on STGW39NC60VD

Full Specifications of STGW39NC60VD

Model NumberSTGW39NC60VD
Model NameSTMicroelectronics STGW39NC60VD
CategoryIGBTs
BrandSTMicroelectronics
Description250W 80A 600V TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.985 grams / 0.246389 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))178ns
Power Dissipation (Pd)250W
Turn?on Delay Time (Td(on))33ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,30A
Total Gate Charge (Qg@Ic,Vge)126nC
Diode Reverse Recovery Time (Trr)45ns
Turn?off Switching Loss (Eoff)0.537mJ
Turn?on Switching Loss (Eon)0.333mJ

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