STGW40H120DF2 by STMicroelectronics – Specifications

STMicroelectronics STGW40H120DF2 is a STGW40H120DF2 from STMicroelectronics, part of the IGBTs. It is designed for 468W 80A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 152ns
  • Power Dissipation (Pd): 468W
  • Turn?on Delay Time (Td(on)): 18ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.6V@15V,40A
  • Total Gate Charge (Qg@Ic,Vge): 187nC
  • Diode Reverse Recovery Time (Trr): 488ns
  • Turn?off Switching Loss (Eoff): 1.32mJ
  • Turn?on Switching Loss (Eon): 1mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6 grams.

More on STGW40H120DF2

Full Specifications of STGW40H120DF2

Model NumberSTGW40H120DF2
Model NameSTMicroelectronics STGW40H120DF2
CategoryIGBTs
BrandSTMicroelectronics
Description468W 80A 1.2kV FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.000 grams / 0.211644 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))152ns
Power Dissipation (Pd)468W
Turn?on Delay Time (Td(on))18ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.6V@15V,40A
Total Gate Charge (Qg@Ic,Vge)187nC
Diode Reverse Recovery Time (Trr)488ns
Turn?off Switching Loss (Eoff)1.32mJ
Turn?on Switching Loss (Eon)1mJ

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