STGW40NC60KD by STMicroelectronics – Specifications

STMicroelectronics STGW40NC60KD is a STGW40NC60KD from STMicroelectronics, part of the IGBTs. It is designed for 250W 70A 600V TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 164ns
  • Power Dissipation (Pd): 250W
  • Turn?on Delay Time (Td(on)): 46ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 70A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.7V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 135nC
  • Diode Reverse Recovery Time (Trr): 45ns
  • Turn?off Switching Loss (Eoff): 0.716mJ
  • Turn?on Switching Loss (Eon): 0.595mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.985 grams.

More on STGW40NC60KD

Full Specifications of STGW40NC60KD

Model NumberSTGW40NC60KD
Model NameSTMicroelectronics STGW40NC60KD
CategoryIGBTs
BrandSTMicroelectronics
Description250W 70A 600V TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.985 grams / 0.246389 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))164ns
Power Dissipation (Pd)250W
Turn?on Delay Time (Td(on))46ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)70A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.7V@15V,30A
Total Gate Charge (Qg@Ic,Vge)135nC
Diode Reverse Recovery Time (Trr)45ns
Turn?off Switching Loss (Eoff)0.716mJ
Turn?on Switching Loss (Eon)0.595mJ

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