STGW50H65DFB2-4 by STMicroelectronics – Specifications

STMicroelectronics STGW50H65DFB2-4 is a STGW50H65DFB2-4 from STMicroelectronics, part of the IGBTs. It is designed for 272W 86A 650V FS(Field Stop) TO-247-4 IGBTs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 128ns
  • Power Dissipation (Pd): 272W
  • Turn?on Delay Time (Td(on)): 18ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 86A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 151nC
  • Diode Reverse Recovery Time (Trr): 92ns
  • Turn?off Switching Loss (Eoff): 0.478mJ
  • Turn?on Switching Loss (Eon): 0.629mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on STGW50H65DFB2-4

Full Specifications of STGW50H65DFB2-4

Model NumberSTGW50H65DFB2-4
Model NameSTMicroelectronics STGW50H65DFB2-4
CategoryIGBTs
BrandSTMicroelectronics
Description272W 86A 650V FS(Field Stop) TO-247-4 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))128ns
Power Dissipation (Pd)272W
Turn?on Delay Time (Td(on))18ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)86A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,50A
Total Gate Charge (Qg@Ic,Vge)151nC
Diode Reverse Recovery Time (Trr)92ns
Turn?off Switching Loss (Eoff)0.478mJ
Turn?on Switching Loss (Eon)0.629mJ

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