STGW75H65DFB2-4 by STMicroelectronics – Specifications

STMicroelectronics STGW75H65DFB2-4 is a STGW75H65DFB2-4 from STMicroelectronics, part of the IGBTs. It is designed for 357W 115A 650V FS(Field Stop) TO-247-4 IGBTs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 121ns
  • Power Dissipation (Pd): 357W
  • Turn?on Delay Time (Td(on)): 22ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 115A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,75A
  • Total Gate Charge (Qg@Ic,Vge): 207nC
  • Diode Reverse Recovery Time (Trr): 88ns
  • Turn?off Switching Loss (Eoff): 0.766mJ
  • Turn?on Switching Loss (Eon): 0.992mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 9.2 grams.

More on STGW75H65DFB2-4

Full Specifications of STGW75H65DFB2-4

Model NumberSTGW75H65DFB2-4
Model NameSTMicroelectronics STGW75H65DFB2-4
CategoryIGBTs
BrandSTMicroelectronics
Description357W 115A 650V FS(Field Stop) TO-247-4 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:9.200 grams / 0.324521 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))121ns
Power Dissipation (Pd)357W
Turn?on Delay Time (Td(on))22ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)115A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,75A
Total Gate Charge (Qg@Ic,Vge)207nC
Diode Reverse Recovery Time (Trr)88ns
Turn?off Switching Loss (Eoff)0.766mJ
Turn?on Switching Loss (Eon)0.992mJ

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