STGW80H65DFB-4 by STMicroelectronics – Specifications

STMicroelectronics STGW80H65DFB-4 is a STGW80H65DFB-4 from STMicroelectronics, part of the IGBTs. It is designed for 469W 120A 650V FS(Field Stop) TO-247-4 IGBTs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 280ns
  • Power Dissipation (Pd): 469W
  • Turn?on Delay Time (Td(on)): 84ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 120A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,80A
  • Total Gate Charge (Qg@Ic,Vge): 414nC
  • Diode Reverse Recovery Time (Trr): 85ns
  • Turn?off Switching Loss (Eoff): 1.5mJ
  • Turn?on Switching Loss (Eon): 2.1mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.92 grams.

More on STGW80H65DFB-4

Full Specifications of STGW80H65DFB-4

Model NumberSTGW80H65DFB-4
Model NameSTMicroelectronics STGW80H65DFB-4
CategoryIGBTs
BrandSTMicroelectronics
Description469W 120A 650V FS(Field Stop) TO-247-4 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.920 grams / 0.27937 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))280ns
Power Dissipation (Pd)469W
Turn?on Delay Time (Td(on))84ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)120A
Collector-Emitter Breakdown Voltage (Vces)650V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,80A
Total Gate Charge (Qg@Ic,Vge)414nC
Diode Reverse Recovery Time (Trr)85ns
Turn?off Switching Loss (Eoff)1.5mJ
Turn?on Switching Loss (Eon)2.1mJ

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